How does the pretreatment of graphite flakes improve the quality of synthesized diamonds?
Release time:
2026-04-24
source:
Pre-treating graphite flakes with water-soluble multi-component compounds can significantly improve the quality of synthesized diamonds in the following key aspects:
Coarser granularity: Pretreated graphite flakes are not only conducive to nucleation but also highly beneficial for the growth of single crystals, which can significantly increase the peak value of the product's granularity.While ensuring the unit yield, coarse particles above 40-mesh and 50-mesh account for the vast majority of the total yield.
Substantially increased compressive strength: For diamonds synthesized using pretreated graphite flakes, the compressive strength of coarse particles above 40-mesh can reach over 8 kg, and those above 50-mesh can reach over 10 kg.This improvement in strength is closely related to the increase in nitrogen content within the diamond.
High proportion of complete single crystals: The synthesized diamonds exhibit fewer intergrown crystals and better crystal shapes.According to electron microscope morphology statistics, the proportion of complete single crystals is as high as over 80%.
Reduced catalyst impurities and increased nitrogen content: The pretreatment significantly reduces the content of catalyst-related impurities in the diamond (including its defects and inclusions)Meanwhile, the nitrogen content increases significantly.he pretreatment makes it more favorable for nitrogen to replace carbon atoms in the crystal lattice, which not only improves the physical properties and crystal structure of the diamond but also directly enhances its compressive streng.
the Uniform bilateral growth on catalyst flakes: The various trace elements introduced into the pretreated graphite flakes play a co-catalytic and catalytic role in the growth of diamonds, enabling ideal diamond crystals to grow uniformly on both the front and back sides of the catalyst flakes, breaking the limitation of ordinary synthesis where a large amount of growth usually occurs on only one side.
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